 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| AP3302H/J Advanced Power Electronics Corp. Low Gate Charge Simple Drive Requirement Fast Switching G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 25V 50m 16A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP3302J) is available for low-profile applications. G DS TO-252(H) G D S TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25 ID@TC=100 IDM PD@TC=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 25 20 16 10 25 20 0.16 -55 to 150 -55 to 150 Units V V A A A W W/ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 6.4 110 Unit /W /W Data & specifications subject to change without notice 200701031 AP3302H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance Gate Threshold Voltage Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o Test Conditions VGS=0V, ID=250uA 2 Min. 25 2 - Typ. 7.4 2.2 4.2 8 7.4 11 3 164 158 62 Max. Units 50 4 1 25 100 13 290 V m V uA uA nA nC nC nC ns ns ns ns pF pF pF VGS=10V, ID=8A VDS=VGS, ID=250uA VDS=25V, VGS=0V VDS=20V, VGS=0V VGS= 20V ID=10A VDS= 24V VGS=10V VDS=15V ID=16A RG=3.3,VGS=10V RD=0.94 VGS=0V VDS=25V f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance 2 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 Test Conditions IS=16A, VGS=0V IS=16A, VGS=0V, dI/dt=100A/s Min. - Typ. 29 21 Max. Units 1.3 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by safe operating area. 2.Pulse width <300us , duty cycle <2%. AP3302H/J 25 11 T c =25 o C 20 10V 10 T c =150 o C 9 10V 9.0V 8.0V ID , Drain Current (A) ID , Drain Current (A) 9.0V 15 8 7 6 7.0V 5 4 8.0V 10 5 7.0V V G =5.0V 3 2 V G =5.0V 1 0 0 1 2 3 4 5 6 0 0 1 2 3 4 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 30 1.8 1.6 I D =20A V G =10V Normalized RDS(ON) 20 1.4 PD (W) 1.2 10 1.0 0.8 0 0.6 0 50 100 150 -50 0 50 100 150 T j , Junction Temperature ( C) o T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 5 100 4.5 10 4 IS (A) VGS(th) (V) T j =150 o C 1 T j =25 C o 3.5 3 0.1 2.5 2 0.01 0 0.4 0.8 1.2 1.6 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP3302H/J f=1.0MHz 25 1000 I D =10A VGS , Gate to Source Voltage (V) 20 15 C (pF) V DS =20V V DS =16V V DS =12V Ciss 100 Coss Crss 10 5 0 0 2 4 6 8 10 12 10 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 10 Normalized Thermal Response (Rthjc) DUTY=0.5 0.2 ID (A) 1 10ms 100ms 1s DC 0.1 0.1 0.05 PDM 0.02 t 0.01 0.1 T Duty factor = t/T Peak Tj = PDM x Rthjc + T C T c =25 o C Single Pulse 0.1 1 10 100 Single Pulse 0.01 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
Price & Availability of AP3302J
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |